Researchers from the Indian Institute of Technology, Guwahati, led by Dr. AnkushBag, have achieved a breakthrough in creating a special semiconductor called gallium oxide. This semiconductor is highly efficient even at extremely high temperatures, reaching up to 200 ºC. The research team, in collaboration with IIT Mandi and the Institute of Sensor and Actuator Systems at Technical University Wien, developed a cost-effective method utilizing a custom low-pressure chemical vapor deposition (LPCVD) system to grow the gallium oxide semiconductor. This innovation holds potential for significantly enhancing the efficiency of high-power electronics, particularly in applications such as electric vehicles and high-voltage systems. It addresses the need for compound semiconductor materials with ultra-wide bandgaps, crucial for emerging high-power applications. This breakthrough could lead to the development of more efficient and durable high-power devices across various industries.

Source-IIT Guwahati